System Introduction
Thermal Atomic Layer Deposition System is a single-wafer deposition system specially designed for scientific research and small-scale experiments of industrialization .The electric of the system completely accords with the CE criterion. , it’s widely used in the fields of micro-electronic,nano material, optical film, solar battery etc.
Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.
Technical specifications
|
Wafer Dimension |
8 inch and below |
|
|
Wafer temperature |
RT-400℃,Controlling precision ±0.1℃ |
|
|
Number of precursor |
Three precursor lines,optional more lines |
|
|
Temperature of precursor lines |
RT-200℃,Controlling precision ±0.1℃ |
|
|
Temperature of source bottles |
RT-200℃,Controlling precision ±0.1℃ |
|
|
ALD Valve |
Swagelok ALD swift valve |
|
|
Background vacuum |
<5*10-3Torr |
|
|
Gas carrier system |
N2 or Ar |
|
|
Growing mode |
Consecutive or interval deposition mode |
|
|
Controlling system |
PLC plus touch screen or display |
|
|
Power supply |
50-60Hz,220V/20A AC |
|
|
Depositon Heterogeneity |
Heterogeneity＜±1% |
|
|
Dimension of the instrument |
600mmx600mmx1100mm |
ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…
Application fields of ALD
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure